Document Type

Article

Publication Date

2019

College/Unit

Statler College of Engineering and Mining Resources

Department/Program/Center

Lane Department of Computer Science and Electrical Engineering

Abstract

Abstract: In this paper, we present a regulated charge pump with extremely low output ripple (<1 mV) that can be used for accurate programming of nonvolatile memory. We present a technique to include a low-drop-out regulator inside the charge-pump regulation loop to reduce the ripple. This charge pump was fabricated in a 0.35 µm standard CMOS process. The die area of this charge pump is 0.163 mm2 . While operating from a 2.5 V supply, this charge pump generates regulated voltages up to 10 V.

Source Citation

Navidi, M. M., & Graham, D. W. (2019). A Regulated Charge Pump with Extremely Low Output Ripple. Electronics, 8(11), 1293. https://doi.org/10.3390/electronics8111293

Comments

© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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