Document Type


Publication Date



Statler College of Engineering and Mining Resources


Lane Department of Computer Science and Electrical Engineering


Abstract: In this paper, we present a regulated charge pump with extremely low output ripple (<1 mV) that can be used for accurate programming of nonvolatile memory. We present a technique to include a low-drop-out regulator inside the charge-pump regulation loop to reduce the ripple. This charge pump was fabricated in a 0.35 µm standard CMOS process. The die area of this charge pump is 0.163 mm2 . While operating from a 2.5 V supply, this charge pump generates regulated voltages up to 10 V.

Source Citation

Navidi, M. M., & Graham, D. W. (2019). A Regulated Charge Pump with Extremely Low Output Ripple. Electronics, 8(11), 1293.


© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (



To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.