Statler College of Engineering and Mining Resources
Lane Department of Computer Science and Electrical Engineering
Abstract: In this paper, we present a regulated charge pump with extremely low output ripple (<1 mV) that can be used for accurate programming of nonvolatile memory. We present a technique to include a low-drop-out regulator inside the charge-pump regulation loop to reduce the ripple. This charge pump was fabricated in a 0.35 µm standard CMOS process. The die area of this charge pump is 0.163 mm2 . While operating from a 2.5 V supply, this charge pump generates regulated voltages up to 10 V.
Digital Commons Citation
Navidi, Mir Mohammad and Graham, David W., "A Regulated Charge Pump with Extremely Low Output Ripple" (2019). Faculty & Staff Scholarship. 1662.
Navidi, M. M., & Graham, D. W. (2019). A Regulated Charge Pump with Extremely Low Output Ripple. Electronics, 8(11), 1293. https://doi.org/10.3390/electronics8111293