Document Type
Article
Publication Date
2016
College/Unit
Statler College of Engineering and Mining Resources
Department/Program/Center
Mechanical and Aerospace Engineering
Abstract
: The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC) has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC.
Digital Commons Citation
Boretti, Albert and Rosa, Lorenzo, "Latest Advances in the Generation of Single Photons in Silicon Carbide" (2016). Faculty & Staff Scholarship. 2069.
https://researchrepository.wvu.edu/faculty_publications/2069
Source Citation
Boretti, A., & Rosa, L. (2016). Latest Advances in the Generation of Single Photons in Silicon Carbide. Technologies, 4(2), 16. https://doi.org/10.3390/technologies4020016
Comments
© 2016 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).