Statler College of Engineering and Mining Resources
Mechanical and Aerospace Engineering
In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon powder and carbon black powder placed in a horizontal tube furnace were exposed to temperatures ranging from 1,250 to 1,500°C for 5–12 h in an argon atmosphere at atmospheric pressure. The resulting SiC nanoribbons were tens to hundreds of microns in length, a few microns in width and tens of nanometers in thickness. The nanoribbons were characterized with electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy, and were found to be hexagonal wurtzite–type SiC (2H-SiC) with a growth direction of . The influence of the synthesis conditions such as the reaction temperature, reaction duration and chamber pressure on the growth of the SiC nanomaterial was investigated. A vapor–solid reaction dominated nanoribbon growth mechanism was discussed.
Digital Commons Citation
Zhang, Huan; Ding, Weiqiang; He, Kai; and Li, Ming, "Synthesis and Characterization of Crystalline Silicon Carbide Nanoribbons" (2010). Faculty & Staff Scholarship. 2756.
Zhang, H., Ding, W., He, K. et al. Synthesis and Characterization of Crystalline Silicon Carbide Nanoribbons. Nanoscale Res Lett 5, 1264 (2010). https://doi.org/10.1007/s11671-010-9635-9