Electron paramagnetic resonance(EPR) has been used to investigate singly ionized selenium vacancy V Se + centers in ZnSe epilayers grown by molecular beam epitaxy(MBE). The study included undoped and nitrogen-doped films. Spectra taken at 8 K and 9.45 GHz, as the magnetic field was rotated in the plane from  to , showed an isotropic signal at g =2.0027±0.0004 with a linewidth of 5.8 G. In the two samples where this signal was observed, estimates of concentration were approximately 1.1×10 17 and 6.3×10 17 cm −3 . The appearance of the EPR signal correlated with an increase in the Zn/Se beam equivalent pressure ratio (during growth) in undoped films and with an increase in the nitrogen concentration in doped films. We conclude that the singly ionized selenium vacancy may be a dominant point defect in many MBE-grown ZnSe layers and that these defects may play a role in the compensation mechanisms in heavily nitrogen-doped ZnSe thin films.
Digital Commons Citation
Setzler, S. D.; Moldovan, M.; Yu, Zhonghai; Myers, T. H.; Giles, N. C.; and Halliburton, L. E., "Observation Of Singly Ionized Selenium Vacancies In Znse Grown By Molecular Beam Epitaxy" (1997). Faculty Scholarship. 620.
Setzler, S. D., Moldovan, M., Yu, Zhonghai., Myers, T. H., Giles, N. C., & Halliburton, L. E. (1997). Observation Of Singly Ionized Selenium Vacancies In Znse Grown By Molecular Beam Epitaxy. Applied Physics Letters, 70(17), 2274-2276. http://doi.org/10.1063/1.118836