Document Type

Article

Publication Date

2004

Source Citation

Rummukainen, M., Oila, J., Laakso, A., Saarinen, K., Ptak, A. J., & Myers, T. H. (2004). Vacancy Defects In O-Doped Gan Grown By Molecular-Beam Epitaxy: The Role Of Growth Polarity And Stoichiometry. Applied Physics Letters, 84(24), 4887-4889. http://doi.org/10.1063/1.1762984

Share

COinS