Eberly College of Arts and Sciences
GaN was grown by molecular beam epitaxy using an rf plasma source. Growth under gallium‐rich conditions at 730 °C was required to produce high quality layers as indicated by photoluminescence, Hall effect, atomic force microscopy, and x‐ray diffraction measurements. Atomic hydrogen has a significant effect for Ga‐rich growth, increasing growth rates by as much as a factor of 2.
Digital Commons Citation
Yu, Zhonghai; Buczkowski, S. L.; Giles, N. C.; Myers, T. H.; and Richards-Babb, Michelle, "The Effect of Atomic Hydrogen on the Growth of Gallium Nitride by Molecular Beam Epitaxy" (1996). Faculty & Staff Scholarship. 862.