Document Type


Publication Date



Eberly College of Arts and Sciences




The surface of two GaN films grown under Ga-rich conditions by molecular beam epitaxywas characterized using x-ray reflectivity, assuming a self-affine/fractal surface morphology. The surface height fluctuations were similar for both samples at the largest lateral length scales at which the fractal description is valid, although this lateral length was significantly greater and the “jaggedness” significantly smaller for the sample grown under higher Ga flux. Previous atomic force microscopy images revealed a higher density of large features on the surface for the sample grown under lower Ga flux. The lateral size of the features are dominated by a convolution of the atomic force microscopy tip shape and the actual features on the surface, which precludes an accurate determination of the surface structure at length scales smaller than the tip radius. This study illustrates the importance of using different techniques to evaluate the film surface morphology at different length scales.

Included in

Chemistry Commons



To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.