Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen

Authors

Zhonghai Yu
S. L. Buczkowski
N. C. Giles
T. H. Myers

Document Type

Article

Publication Date

1996

Digital Commons Citation

Yu, Zhonghai; Buczkowski, S. L.; Giles, N. C.; and Myers, T. H., "Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen" (1996). Faculty & Staff Scholarship. 113.
https://researchrepository.wvu.edu/faculty_publications/113

Source Citation

Yu, Zhonghai., Buczkowski, S. L., Giles, N. C., & Myers, T. H. (1996). Defect Reduction In Znse Grown By Molecular Beam Epitaxy On Gaas Substrates Cleaned Using Atomic Hydrogen. Applied Physics Letters, 69(1), 82-84. http://doi.org/10.1063/1.118127