Document Type

Article

Publication Date

2016

College/Unit

Eberly College of Arts and Sciences

Department/Program/Center

Physics and Astronomy

Abstract

Epitaxial NbO2 thin films were grown on Si:GaN layers deposited on Al2O3 substrates using pulsed laser deposition. Pulsed current-voltage (IV) curves and self-sustained current oscillations were measured across a 31 nm NbO2 film and compared with a similar device made from polycrystalline NbO2 film grown on TiN-coated SiO2/Si substrate. Crystal quality of the as grown films was determined from x-ray diffractometry, x-ray photoelectron spectroscopy and atomic force microscopy data. The epitaxial film device was found to be more stable than the defect-rich polycrystalline sample in terms of current switching and oscillation behaviors.

Source Citation

Joshi, T., Borisov, P., & Lederman, D. (2016). The role of defects in the electrical properties of NbO2 thin film vertical devices. AIP Advances, 6(12), 125006. https://doi.org/10.1063/1.4971818

Comments

All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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