Eberly College of Arts and Sciences
Physics and Astronomy
Epitaxial NbO2 thin films were grown on Si:GaN layers deposited on Al2O3 substrates using pulsed laser deposition. Pulsed current-voltage (IV) curves and self-sustained current oscillations were measured across a 31 nm NbO2 film and compared with a similar device made from polycrystalline NbO2 film grown on TiN-coated SiO2/Si substrate. Crystal quality of the as grown films was determined from x-ray diffractometry, x-ray photoelectron spectroscopy and atomic force microscopy data. The epitaxial film device was found to be more stable than the defect-rich polycrystalline sample in terms of current switching and oscillation behaviors.
Digital Commons Citation
Joshi, Toyanath; Borisov, Pavel; and Lederman, David, "The Role of Defects in the Electrical Properties of NbO2 Thin Film Vertical Devices" (2016). Faculty & Staff Scholarship. 1536.
Joshi, T., Borisov, P., & Lederman, D. (2016). The role of defects in the electrical properties of NbO2 thin film vertical devices. AIP Advances, 6(12), 125006. https://doi.org/10.1063/1.4971818