Eberly College of Arts and Sciences
Physics and Astronomy
When used as optical parametric oscillators, CdSiP2 crystals generate tunable output in the mid-infrared. Their performance, however, is often limited by unwanted optical absorption bands that overlap the pump wavelengths. A broad defect-related optical absorption band peaking near 800 nm, with a shoulder near 1 µm, can be photoinduced at room temperature in many CdSiP2 crystals. This absorption band is efficiently produced with 633 nm laser light and decays with a lifetime of ∼0.5 s after removal of the excitation light. The 800 nm band is accompanied by a less intense absorption band peaking near 1.90 µm. Data from eight CdSiP2 crystals grown at different times show that the singly ionized silicon vacancy (VSi−" role="presentation" style="box-sizing: border-box; display: inline; font-size: 12.880000114440918px; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">𝑉−𝑆𝑖) is responsible for the photoinduced absorption bands. Electron paramagnetic resonance (EPR) is used to identify and directly monitor these silicon vacancies.
Digital Commons Citation
Scherrer, E M.; Kananen, B E.; Golden, E M.; Hopkins, F K.; Zawilski, K T.; Schunemann, P G.; Halliburton, L E.; and Giles, N C., "Defect-related optical absorption bands in CdSiP2 crystals" (2017). Faculty & Staff Scholarship. 1770.
Scherrer, E. M., Kananen, B. E., Golden, E. M., Hopkins, F. K., Zawilski, K. T., Schunemann, P. G., Halliburton, L. E., & Giles, N. C. (2017). Defect-related optical absorption bands in CdSiP_2 crystals. Optical Materials Express, 7(3), 658. https://doi.org/10.1364/ome.7.000658