Document Type
Article
Publication Date
2004
Digital Commons Citation
Rummukainen, M.; Oila, J.; Laakso, A.; Saarinen, K.; Ptak, A. J.; and Myers, T. H., "Vacancy Defects In O-Doped Gan Grown By Molecular-Beam Epitaxy: The Role Of Growth Polarity And Stoichiometry" (2004). Faculty & Staff Scholarship. 724.
https://researchrepository.wvu.edu/faculty_publications/724
Source Citation
Rummukainen, M., Oila, J., Laakso, A., Saarinen, K., Ptak, A. J., & Myers, T. H. (2004). Vacancy Defects In O-Doped Gan Grown By Molecular-Beam Epitaxy: The Role Of Growth Polarity And Stoichiometry. Applied Physics Letters, 84(24), 4887-4889. http://doi.org/10.1063/1.1762984
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