Semester

Spring

Date of Graduation

2022

Document Type

Dissertation

Degree Type

PhD

College

Eberly College of Arts and Sciences

Department

Physics and Astronomy

Committee Chair

Edward Flagg

Committee Co-Chair

Alan Bristow

Committee Member

Alan Bristow

Committee Member

Aldo Romero

Committee Member

Marcelo Davanco

Abstract

Semiconductor quantum dots (QDs) are promising candidates to fulfill a wide range of applications in real-world quantum computing, communication, and networks. Their excellent optical properties such as high brightness, single-photon purity, and narrow linewidths show potential utility in many areas. In order to realize long term goals of integration into complex and scalable quantum information systems, many current challenges must be overcome. One of these challenges is accomplishment of all necessary computing operations within a QD, which might be enabled by coherent manipulation of single QD energy level structures. In the realm of scalability for quantum devices, a way to address problems posed by the inhomogeneous distribution of individual QD spectral properties is necessary.

This dissertation presents record large AC Stark shifts applied to the energy level structure of a single semiconductor QD, as well as an automated spectroscopy method for efficient characterization of many QDs. The AC Stark shifts are spin-selective and fast, which are highly desirable qualities in a mechanism for energy level reconfiguration. The AC stark shifts are measured by resonant excitation spectroscopy; a coherent technique which explicitly shows the change in energetic structure. A novel optical filtering scheme is developed to discriminate the high-powered laser inducing the shifts from the weak QD photoluminescence, and a polarimeter device is constructed to accurately measure the polarization state of a laser beam. Machine vision is used to automate spectroscopy of many QDs in bulk by acquiring high-resolution emission spectra, which allows characterization of individual QD energy level structures prior to device fabrication.

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