Date of Graduation
1998
Document Type
Thesis
Degree Type
MS
College
Statler College of Engineering and Mineral Resources
Committee Chair
Lawrence A. Hornak
Committee Member
Biswajit Das
Committee Member
Thomas Myers
Abstract
Over the last two decades researchers have tried to grow wide band gap semiconductors for their use as blue light and ultraviolet laser diodes, and for solar blind ultraviolet detectors. III-V nitrides have been investigated for over twenty years. Gallium nitride is one such wide band gap semiconductor that has gained much attention [1]. Gallium nitride is a very hard material, is chemically stable and can withstand high temperatures. Early on, Metalorganic Chemical Vapor Deposition (MOCVD) and Metalorganic Vapor Phase Epitaxy (MOVPE) were the choices of growth techniques for gallium nitride. However, as a potential alternate, many researchers have recently focused their attention on growing gallium nitride by Molecular Beam Epitaxial growth techniques.
Recommended Citation
Frazier, Stuart Thomas, "Contact characterization and persistent photoconductivity effects in MBE grown n-type gallium nitride." (1998). Graduate Theses, Dissertations, and Problem Reports. 10373.
https://researchrepository.wvu.edu/etd/10373