Date of Graduation
2007
Document Type
Thesis
Degree Type
MS
Committee Chair
Dimitris Korakakis
Abstract
Silicon Carbide possesses a combination of properties that make it ideal for use in electronics. Its high values of electric breakdown field, band gap and saturated electron drift velocity have attracted the attention of the semiconductor community. Although the interest in β-SiC/Si devices has intensified in recent years little focus has been given to the study of nano-thin film devices. Monocrystalline nano-thin β-SiC films have been reproducibly grown on Si (100) by Gas Source Molecular Beam Epitaxy. Auger Electron Spectroscopy and Reflection High Energy Electron Diffraction characterization have confirmed a consistent growth of β-SiC/Si. Scanning Electron Microscopy and Atomic Force Microscopy characterization has determined film thicknesses of 30nm. These nano-films have been used in the fabrication of Metal-Semiconductor-Metal (MSM) devices formed by aluminum Schottky contacts. Under electrical characterization, these MSM devices have exhibited unique properties in that the dominant conduction path does not occur at the β-SiC/Si interface as previously reported, but within the entire β-SiC layer. Results obtained through oxide and hydrofluoric surface treatments have indicated that conduction is largely dependent on the surface condition of the device. This effect suggests the possibility for nano-thin, β-SiC films to be used in chemical agent sensors. Resultant discussions and explanations are given.
Recommended Citation
Shelton, Nicholas P., "An investigation of beta-silicon carbide/silicon (100) for high temperature hydrogen detection." (2007). Graduate Theses, Dissertations, and Problem Reports (ETD). 11030.
https://researchrepository.wvu.edu/etd/11030