Date of Graduation
1984
Document Type
Dissertation/Thesis
Abstract
Metal-semiconductor (Schottky-barrier) solar cells have lower open-circuit voltage than p-n junction solar cells. The open-circuit voltage of a Schottky-barrier solar cell can be increased by the use of an ultrathin oxide layer between the metal and the semiconductor. Fabrication and testing of MIS solar cells with steam-grown oxide layers shows that short-term degradation occurs (within six weeks) and is indicated by lowering maximum power output. Degradation occurs independent of environmental conditions. Auger Electron Spectroscopy (AES) depth-profiles show that degradation is due to growth of a metal-oxide layer at the metal-SiO(,2) interface. This process occurs in a few weeks; with high rate the first two weeks and then gradually reaches steady condition, with no further degradation. The metal oxide increases the series resistance of the solar cell.
Recommended Citation
Alamoud, Abdul Rahman, "The Influence Of A Thermal Oxide Layer On Short-Term Degradation Of Silicon Mis Solar Cell Output." (1984). Graduate Theses, Dissertations, and Problem Reports. 8368.
https://researchrepository.wvu.edu/etd/8368