Document Type
Article
Publication Date
2019
College/Unit
Statler College of Engineering and Mining Resources
Department/Program/Center
Lane Department of Computer Science and Electrical Engineering
Abstract
Abstract: In this paper, we present a regulated charge pump with extremely low output ripple (mV) that can be used for accurate programming of nonvolatile memory. We present a technique to include a low-drop-out regulator inside the charge-pump regulation loop to reduce the ripple. This charge pump was fabricated in a 0.35 µm standard CMOS process. The die area of this charge pump is 0.163 mm2 . While operating from a 2.5 V supply, this charge pump generates regulated voltages up to 10 V.
Digital Commons Citation
Navidi, Mir Mohammad and Graham, David W., "A Regulated Charge Pump with Extremely Low Output Ripple" (2019). Faculty & Staff Scholarship. 1662.
https://researchrepository.wvu.edu/faculty_publications/1662
Source Citation
Navidi, M. M., & Graham, D. W. (2019). A Regulated Charge Pump with Extremely Low Output Ripple. Electronics, 8(11), 1293. https://doi.org/10.3390/electronics8111293
Comments
© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).